Gate-Emitter Thr Voltage-Max 6.5V
Gate-Emitter Voltage-Max 20V
Switching Energy 75μJ (on), 225μJ (off)
Td (on/off) @ 25°C 31ns/83ns
Current - Collector Pulsed (Icm) 36A
Vce(on) (Max) @ Vge, Ic 1.85V @ 15V, 12A
Test Condition 400V, 12A, 22 Ω, 15V
Collector Emitter Saturation Voltage 1.55V
Collector Emitter Breakdown Voltage 600V
Reverse Recovery Time 68 ns
Max Collector Current 32A
Collector Emitter Voltage (VCEO) 1.85V
Polarity/Channel Type N-CHANNEL
Element Configuration Single
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Max Power Dissipation 140W
Subcategory Insulated Gate BIP Transistors
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature -40°C~175°C TJ