IRGB4061DPBF
RoHS
/
Package TO-220-3
Category Discrete Semiconductor Products / Transistors - IGBTs - Single
Description
IGBT 600V 36A 206W TO220AB
PDF
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Buying Options
Total Price: USD $1.38
Unit Price: USD $1.3832
≥1 USD $1.3832
≥10 USD $1.13525
≥100 USD $1.09915
≥500 USD $1.064
≥1000 USD $1.02885
Inventory: 1258
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 16 Weeks
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Weight 6.000006g
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2004
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 206W
Number of Elements 1
Element Configuration Single
Power Dissipation 206W
Case Connection COLLECTOR
Input Type Standard
Turn On Delay Time 40 ns
Transistor Application POWER CONTROL
Rise Time 25 ns
Polarity/Channel Type N-CHANNEL
Turn-Off Delay Time 105 ns
Collector Emitter Voltage (VCEO) 1.95V
Max Collector Current 36A
Reverse Recovery Time 100 ns
JEDEC-95 Code TO-220AB
Collector Emitter Breakdown Voltage 600V
Collector Emitter Saturation Voltage 1.65V
Turn On Time 65 ns
Test Condition 400V, 18A, 22 Ω, 15V
Vce(on) (Max) @ Vge, Ic 1.95V @ 15V, 18A
Turn Off Time-Nom (toff) 160 ns
IGBT Type Trench
Gate Charge 35nC
Current - Collector Pulsed (Icm) 72A
Td (on/off) @ 25°C 40ns/105ns
Switching Energy 95μJ (on), 350μJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 6.5V
Dimensions
Height 9.02mm
Length 10.66mm
Width 4.82mm
Compliance
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status RoHS Compliant
Lead Free Lead Free
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