IRGB4059DPBF
RoHS
/
Package TO-220-3
Category Discrete Semiconductor Products / Transistors - IGBTs - Single
Description
IGBT 600V 8A 56W TO220AB
PDF
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Buying Options
Total Price: USD $1.04
Unit Price: USD $1.0384
≥1 USD $1.0384
Inventory: 689
Minimum: 1
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Technical Details
Compliance
Lead Free Lead Free
RoHS Status RoHS Compliant
REACH SVHC No SVHC
Radiation Hardening No
Dimensions
Width 4.82mm
Length 10.66mm
Height 9.02mm
Technical
Fall Time-Max (tf) 20 ns
Gate-Emitter Thr Voltage-Max 6.5V
Gate-Emitter Voltage-Max 20V
Switching Energy 35μJ (on), 75μJ (off)
Td (on/off) @ 25°C 25ns/65ns
Current - Collector Pulsed (Icm) 16A
Gate Charge 9nC
IGBT Type Trench
Turn Off Time-Nom (toff) 120 ns
Vce(on) (Max) @ Vge, Ic 2.05V @ 15V, 4A
Test Condition 400V, 4A, 100 Ω, 15V
Turn On Time 35 ns
Collector Emitter Saturation Voltage 1.75V
Voltage - Collector Emitter Breakdown (Max) 600V
Collector Emitter Breakdown Voltage 2.2V
JEDEC-95 Code TO-220AB
Reverse Recovery Time 55 ns
Max Collector Current 8A
Collector Emitter Voltage (VCEO) 2.05V
Turn-Off Delay Time 65 ns
Polarity/Channel Type N-CHANNEL
Rise Time 10 ns
Transistor Application POWER CONTROL
Turn On Delay Time 25 ns
Input Type Standard
Case Connection COLLECTOR
Power Dissipation 56W
Element Configuration Single
Number of Elements 1
Max Power Dissipation 56W
Subcategory Insulated Gate BIP Transistors
Additional Feature ULTRA FAST SOFT RECOVERY
ECCN Code EAR99
Termination Through Hole
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Published 2001
Packaging Tube
Operating Temperature -55°C~175°C TJ
Physical
Transistor Element Material SILICON
Weight 6.000006g
Number of Pins 3
Package / Case TO-220-3
Mounting Type Through Hole
Mount Through Hole
Alternative Model
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