IRGB4045DPBF
RoHS
/
Package TO-220-3
Category Discrete Semiconductor Products / Transistors - IGBTs - Single
Description
IGBT 600V 12A 77W TO220AB
PDF
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Buying Options
Total Price: USD $16.88
Unit Price: USD $16.8758
≥1 USD $16.8758
≥10 USD $13.84625
≥100 USD $13.414
≥500 USD $12.9808
≥1000 USD $12.54855
Inventory: 9104
Minimum: 1
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Technical Details
Compliance
Lead Free Lead Free
RoHS Status RoHS Compliant
REACH SVHC No SVHC
Radiation Hardening No
Dimensions
Width 4.82mm
Length 10.66mm
Height 9.02mm
Technical
Fall Time-Max (tf) 22 ns
Gate-Emitter Thr Voltage-Max 6.5V
Gate-Emitter Voltage-Max 20V
Switching Energy 56μJ (on), 122μJ (off)
Td (on/off) @ 25°C 27ns/75ns
Current - Collector Pulsed (Icm) 18A
Gate Charge 13nC
IGBT Type Trench
Turn Off Time-Nom (toff) 127 ns
Vce(on) (Max) @ Vge, Ic 2V @ 15V, 6A
Test Condition 400V, 6A, 47 Ω, 15V
Turn On Time 38 ns
Collector Emitter Saturation Voltage 1.7V
Collector Emitter Breakdown Voltage 600V
JEDEC-95 Code TO-220AB
Reverse Recovery Time 74 ns
Max Collector Current 12A
Collector Emitter Voltage (VCEO) 2V
Turn-Off Delay Time 75 ns
Polarity/Channel Type N-CHANNEL
Rise Time 11 ns
Transistor Application POWER CONTROL
Turn On Delay Time 27 ns
Input Type Standard
Case Connection COLLECTOR
Power Dissipation 77W
Element Configuration Single
Number of Elements 1
Max Power Dissipation 77W
Subcategory Insulated Gate BIP Transistors
ECCN Code EAR99
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Published 2006
Packaging Tube
Operating Temperature -55°C~175°C TJ
Physical
Transistor Element Material SILICON
Number of Pins 3
Package / Case TO-220-3
Mounting Type Through Hole
Mount Through Hole
Alternative Model
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