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IRGB20B60PD1PBF

Infineon Technologies
RoHS
/
Package TO-220-3
Category Discrete Semiconductor Products / Transistors - IGBTs - Single
Description IGBT 600V 40A 215W TO220AB
PDF
/
Buying Options
Total Price: USD $18.79
Unit Price: USD $18.79385
≥1 USD $18.79385
≥10 USD $15.4204
≥100 USD $14.93875
≥500 USD $14.4571
≥1000 USD $13.97545
Inventory: 5752
Minimum: 1
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Technical Details

Supply Chain

Factory Lead Time 16 Weeks

Physical

Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Supplier Device Package TO-220AB
Weight 6.000006g

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2003
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Termination Through Hole
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Voltage - Rated DC 600V
Max Power Dissipation 215W
Current Rating 40A
Element Configuration Single
Power Dissipation 215W
Input Type Standard
Turn On Delay Time 20 ns
Power - Max 215W
Rise Time 5ns
Turn-Off Delay Time 115 ns
Collector Emitter Voltage (VCEO) 2.8V
Max Collector Current 40A
Reverse Recovery Time 28 ns
Collector Emitter Breakdown Voltage 600V
Voltage - Collector Emitter Breakdown (Max) 600V
Current - Collector (Ic) (Max) 40A
Collector Emitter Saturation Voltage 2.05V
Test Condition 390V, 13A, 10Ohm, 15V
Vce(on) (Max) @ Vge, Ic 2.8V @ 15V, 20A
IGBT Type NPT
Gate Charge 68nC
Current - Collector Pulsed (Icm) 80A
Td (on/off) @ 25°C 20ns/115ns
Switching Energy 95μJ (on), 100μJ (off)

Dimensions

Height 8.763mm
Length 10.5156mm
Width 4.69mm

Compliance

Radiation Hardening No
REACH SVHC No SVHC
RoHS Status RoHS Compliant
Lead Free Lead Free

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