Gate-Emitter Thr Voltage-Max 2.2V
Gate-Emitter Voltage-Max 12V
Td (on/off) @ 25°C 900ns/6μs
Vce(on) (Max) @ Vge, Ic 1.75V @ 5V, 14A
Collector Emitter Saturation Voltage 1.4V
Collector Emitter Breakdown Voltage 430V
Max Collector Current 20A
Collector Emitter Voltage (VCEO) 1.75V
Polarity/Channel Type N-CHANNEL
Transistor Application AUTOMOTIVE IGNITION
Turn On Delay Time 900 ns
Case Connection COLLECTOR
Element Configuration Single
Max Power Dissipation 125W
Subcategory Insulated Gate BIP Transistors
Additional Feature LOW SATURATION VOLTAGE
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature -40°C~175°C TJ