IRGB10B60KDPBF
RoHS
/
Package TO-220-3
Category Discrete Semiconductor Products / Transistors - IGBTs - Single
Description
IGBT 600V 22A 156W TO220AB
PDF
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Buying Options
Total Price: USD $1.94
Unit Price: USD $1.9361
≥1 USD $1.9361
≥10 USD $1.5884
≥100 USD $1.539
≥500 USD $1.4896
≥1000 USD $1.43925
Inventory: 3485
Minimum: 1
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Technical Details
Compliance
Lead Free Lead Free
RoHS Status RoHS Compliant
REACH SVHC No SVHC
Radiation Hardening No
Dimensions
Width 4.82mm
Length 10.6426mm
Height 16.51mm
Technical
Gate-Emitter Thr Voltage-Max 5.5V
Gate-Emitter Voltage-Max 20V
Switching Energy 140μJ (on), 250μJ (off)
Td (on/off) @ 25°C 30ns/230ns
Current - Collector Pulsed (Icm) 44A
Gate Charge 38nC
IGBT Type NPT
Turn Off Time-Nom (toff) 276 ns
Vce(on) (Max) @ Vge, Ic 2.2V @ 15V, 10A
Test Condition 400V, 10A, 47 Ω, 15V
Turn On Time 50 ns
Collector Emitter Saturation Voltage 1.8V
Collector Emitter Breakdown Voltage 600V
JEDEC-95 Code TO-220AB
Reverse Recovery Time 90 ns
Max Collector Current 22A
Collector Emitter Voltage (VCEO) 2.2V
Polarity/Channel Type N-CHANNEL
Rise Time 20 ns
Transistor Application MOTOR CONTROL
Input Type Standard
Case Connection COLLECTOR
Power Dissipation 156W
Element Configuration Single
Number of Elements 1
Current Rating 22A
Max Power Dissipation 156W
Voltage - Rated DC 600V
Subcategory Insulated Gate BIP Transistors
ECCN Code EAR99
Termination Through Hole
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Published 2003
Packaging Tube
Operating Temperature -55°C~150°C TJ
Physical
Transistor Element Material SILICON
Weight 6.000006g
Number of Pins 3
Package / Case TO-220-3
Mounting Type Through Hole
Mount Through Hole
Supply Chain
Factory Lead Time 16 Weeks
Alternative Model
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