IRG8CH50K10F
RoHS 
RoHS compliant
RoHS compliantPackage Die
Category Discrete Semiconductor Products / Transistors - IGBTs - Single
Description
IGBT CHIP WAFER
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Technical Details
Compliance
RoHS Status ROHS3 Compliant
Technical
Gate-Emitter Thr Voltage-Max 6.5V
Gate-Emitter Voltage-Max 30V
Td (on/off) @ 25°C 60ns/285ns
Gate Charge 245nC
Vce(on) (Max) @ Vge, Ic 2V @ 15V, 50A
Test Condition 600V, 50A, 5 Ω, 15V
Current - Collector (Ic) (Max) 50A
Voltage - Collector Emitter Breakdown (Max) 1200V
Polarity/Channel Type N-CHANNEL
Input Type Standard
Subcategory Insulated Gate BIP Transistors
ECCN Code EAR99
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Active
Published 2015
Packaging Bulk
Operating Temperature -40°C~175°C TJ
Physical
Package / Case Die
Mounting Type Surface Mount
Supply Chain
Factory Lead Time 16 Weeks
Alternative Model
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