IRG7PSH73K10PBF
RoHS
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Package TO-274AA
Category Discrete Semiconductor Products / Transistors - IGBTs - Single
Description
IGBT 1200V 220A 1150W SUPER247
PDF
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Buying Options
Total Price: USD $2.25
Unit Price: USD $2.248998
≥1 USD $2.248998
≥200 USD $0.870453
≥500 USD $0.840256
≥1000 USD $0.824501
Inventory: 4423
Minimum: 1
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Technical Details
Compliance
Lead Free Lead Free
RoHS Status RoHS Compliant
REACH SVHC No SVHC
Radiation Hardening No
Dimensions
Width 5.5mm
Length 16.0782mm
Height 20.8mm
Technical
Gate-Emitter Thr Voltage-Max 7.5V
Switching Energy 7.7mJ (on), 4.6mJ (off)
Td (on/off) @ 25°C 63ns/267ns
Current - Collector Pulsed (Icm) 225A
Gate Charge 360nC
IGBT Type Trench
Turn Off Time-Nom (toff) 567 ns
Vce(on) (Max) @ Vge, Ic 2.3V @ 15V, 75A
Test Condition 600V, 75A, 4.7 Ω, 15V
Turn On Time 172 ns
Collector Emitter Saturation Voltage 2V
Voltage - Collector Emitter Breakdown (Max) 1200V
Collector Emitter Breakdown Voltage 1.2kV
Max Collector Current 220A
Collector Emitter Voltage (VCEO) 2.3V
Turn-Off Delay Time 267 ns
Polarity/Channel Type N-CHANNEL
Transistor Application POWER CONTROL
Power - Max 1150W
Turn On Delay Time 63 ns
Input Type Standard
Case Connection COLLECTOR
Power Dissipation 1.15kW
Element Configuration Single
Number of Elements 1
Max Power Dissipation 1.15kW
Subcategory Insulated Gate BIP Transistors
ECCN Code EAR99
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Published 2010
Packaging Tube
Operating Temperature -55°C~175°C TJ
Physical
Transistor Element Material SILICON
Number of Pins 3
Package / Case TO-274AA
Mounting Type Through Hole
Mount Through Hole
Supply Chain
Factory Lead Time 13 Weeks
Alternative Model
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