Operating Temperature -40°C~150°C TJ
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 520W
Element Configuration Single
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 2.4V
Max Collector Current 65A
Reverse Recovery Time 170 ns
Collector Emitter Breakdown Voltage 1.2kV
Voltage - Collector Emitter Breakdown (Max) 1200V
Current - Collector (Ic) (Max) 120A
Collector Emitter Saturation Voltage 2.4V
Test Condition 600V, 50A, 5 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.4V @ 15V, 50A
Current - Collector Pulsed (Icm) 200A
Td (on/off) @ 25°C 110ns/490ns
Switching Energy 4.8mJ (on), 2.8mJ (off)
Gate-Emitter Voltage-Max 30V
Gate-Emitter Thr Voltage-Max 7.5V