IRG7PSH50UDPBF
RoHS
/
Package TO-247-3
Category Discrete Semiconductor Products / Transistors - IGBTs - Single
Description
IGBT 1200V 116A 462W TO274
PDF
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Buying Options
Total Price: USD $7.35
Unit Price: USD $7.348
≥1 USD $7.348
Inventory: 181
Minimum: 1
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Technical Details
Compliance
Lead Free Lead Free
RoHS Status RoHS Compliant
Radiation Hardening No
Technical
Fall Time-Max (tf) 65ns
Gate-Emitter Thr Voltage-Max 6V
Gate-Emitter Voltage-Max 30V
Switching Energy 3.6mJ (on), 2.2mJ (off)
Td (on/off) @ 25°C 35ns/430ns
Current - Collector Pulsed (Icm) 150A
Gate Charge 440nC
IGBT Type Trench
Turn Off Time-Nom (toff) 650 ns
Vce(on) (Max) @ Vge, Ic 2V @ 15V, 50A
Test Condition 600V, 50A, 5 Ω, 15V
Turn On Time 70 ns
Voltage - Collector Emitter Breakdown (Max) 1200V
Collector Emitter Breakdown Voltage 1.2kV
Reverse Recovery Time 190 ns
Max Collector Current 116A
Collector Emitter Voltage (VCEO) 2V
Polarity/Channel Type N-CHANNEL
Transistor Application POWER CONTROL
Power - Max 462W
Input Type Standard
Case Connection COLLECTOR
Element Configuration Single
Rise Time-Max 60ns
Number of Elements 1
JESD-30 Code R-PSFM-T3
Time@Peak Reflow Temperature-Max (s) 40
Peak Reflow Temperature (Cel) 260
Max Power Dissipation 462W
Subcategory Insulated Gate BIP Transistors
Terminal Finish MATTE TIN OVER NICKEL
ECCN Code EAR99
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
JESD-609 Code e3
Published 2010
Packaging Tube
Operating Temperature -55°C~150°C TJ
Physical
Transistor Element Material SILICON
Number of Pins 247
Package / Case TO-247-3
Mounting Type Through Hole
Mount Through Hole
Alternative Model
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