Gate-Emitter Thr Voltage-Max 6V
Switching Energy 2.56mJ (on), 1.78mJ (off)
Td (on/off) @ 25°C 45ns/410ns
Current - Collector Pulsed (Icm) 160A
Turn Off Time-Nom (toff) 700 ns
Vce(on) (Max) @ Vge, Ic 2V @ 15V, 40A
Test Condition 600V, 40A, 10 Ω, 15V
Collector Emitter Saturation Voltage 1.7V
Voltage - Collector Emitter Breakdown (Max) 1200V
Collector Emitter Breakdown Voltage 1.2kV
Max Collector Current 130A
Collector Emitter Voltage (VCEO) 2V
Turn-Off Delay Time 410 ns
Polarity/Channel Type N-CHANNEL
Transistor Application POWER CONTROL
Case Connection COLLECTOR
Element Configuration Single
Max Power Dissipation 469W
Subcategory Insulated Gate BIP Transistors
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature -55°C~175°C TJ