Operating Temperature -40°C~150°C TJ
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 320W
Element Configuration Single
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 2.4V
Max Collector Current 70A
Reverse Recovery Time 130 ns
Collector Emitter Breakdown Voltage 1.2kV
Voltage - Collector Emitter Breakdown (Max) 1200V
Collector Emitter Saturation Voltage 2.4V
Test Condition 600V, 25A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.4V @ 15V, 25A
Current - Collector Pulsed (Icm) 100A
Td (on/off) @ 25°C 75ns/315ns
Switching Energy 2.1mJ (on), 1.3mJ (off)
Gate-Emitter Thr Voltage-Max 7.5V