Element Configuration Single
Polarity/Channel Type N-CHANNEL
Turn-Off Delay Time 229 ns
Collector Emitter Voltage (VCEO) 2V
Max Collector Current 90A
Collector Emitter Breakdown Voltage 1.2kV
Voltage - Collector Emitter Breakdown (Max) 1200V
Collector Emitter Saturation Voltage 1.7V
Test Condition 600V, 30A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2V @ 15V, 30A
Td (on/off) @ 25°C 25ns/229ns
Switching Energy 2.11mJ (on), 1.18mJ (off)
Gate-Emitter Thr Voltage-Max 6V
Max Power Dissipation 385W
Subcategory Insulated Gate BIP Transistors
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature -55°C~175°C TJ