Operating Temperature -55°C~150°C TJ
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 320W
Element Configuration Single
Case Connection COLLECTOR
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Turn-Off Delay Time 229 ns
Collector Emitter Voltage (VCEO) 2V
Max Collector Current 85A
Reverse Recovery Time 153 ns
Collector Emitter Breakdown Voltage 1.2kV
Voltage - Collector Emitter Breakdown (Max) 1200V
Collector Emitter Saturation Voltage 1.7V
Test Condition 600V, 30A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2V @ 15V, 30A
Turn Off Time-Nom (toff) 444 ns
Current - Collector Pulsed (Icm) 90A
Td (on/off) @ 25°C 25ns/229ns
Switching Energy 2.11mJ (on), 1.18mJ (off)
Gate-Emitter Thr Voltage-Max 6V