Gate-Emitter Thr Voltage-Max 6V
Switching Energy 1.32mJ (off)
Td (on/off) @ 25°C -/233ns
Current - Collector Pulsed (Icm) 90A
Turn Off Time-Nom (toff) 470 ns
Vce(on) (Max) @ Vge, Ic 2.02V @ 15V, 30A
Test Condition 600V, 30A, 10 Ω, 15V
Voltage - Collector Emitter Breakdown (Max) 1200V
Collector Emitter Breakdown Voltage 1.2kV
Max Collector Current 60A
Collector Emitter Voltage (VCEO) 2.02V
Polarity/Channel Type N-CHANNEL
Transistor Application POWER CONTROL
Case Connection COLLECTOR
Element Configuration Single
Qualification Status Not Qualified
Base Part Number IRG7PH42
Time@Peak Reflow Temperature-Max (s) 30
Peak Reflow Temperature (Cel) 250
Max Power Dissipation 321W
Subcategory Insulated Gate BIP Transistors
Terminal Finish MATTE TIN OVER NICKEL
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature -55°C~150°C TJ