IRG7PH42UD1PBF
RoHS
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Package TO-247-3
Category Discrete Semiconductor Products / Transistors - IGBTs - Single
Description
IGBT 1200V 85A 313W TO247AC
PDF
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Buying Options
Total Price: USD $73.63
Unit Price: USD $73.6269
≥1 USD $73.6269
≥10 USD $60.41145
≥100 USD $58.5238
≥500 USD $56.63615
≥1000 USD $54.7485
Inventory: 1204
Minimum: 1
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Technical Details
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2013
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish MATTE TIN OVER NICKEL
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 313W
Peak Reflow Temperature (Cel) 250
Time@Peak Reflow Temperature-Max (s) 30
Number of Elements 1
Element Configuration Single
Power Dissipation 313W
Case Connection COLLECTOR
Input Type Standard
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Turn-Off Delay Time 300 ns
Collector Emitter Voltage (VCEO) 2V
Max Collector Current 85A
JEDEC-95 Code TO-247AC
Collector Emitter Breakdown Voltage 1.2kV
Voltage - Collector Emitter Breakdown (Max) 1200V
Collector Emitter Saturation Voltage 1.7V
Test Condition 600V, 30A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2V @ 15V, 30A
Turn Off Time-Nom (toff) 460 ns
IGBT Type Trench
Gate Charge 180nC
Current - Collector Pulsed (Icm) 200A
Td (on/off) @ 25°C -/270ns
Switching Energy 1.21mJ (off)
Gate-Emitter Thr Voltage-Max 6V
Dimensions
Height 20.7mm
Length 15.87mm
Width 5.3086mm
Compliance
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status RoHS Compliant
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