IRG7PH42UD1MPBF
RoHS
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Package TO-247-3
Category Discrete Semiconductor Products / Transistors - IGBTs - Single
Description
IGBT 1200V 85A 313W TO247AD
PDF
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Buying Options
Total Price: USD $1.12
Unit Price: USD $1.119687
≥1 USD $1.119687
≥10 USD $1.05631
≥100 USD $0.996519
≥500 USD $0.940111
≥1000 USD $0.886895
Inventory: 1135
Minimum: 1
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Technical Details
Technical
Switching Energy 1.21mJ (off)
Gate-Emitter Thr Voltage-Max 6V
Td (on/off) @ 25°C -/270ns
Current - Collector Pulsed (Icm) 200A
Gate Charge 270nC
IGBT Type Trench
Vce(on) (Max) @ Vge, Ic 2V @ 15V, 30A
Test Condition 600V, 30A, 10 Ω, 15V
Collector Emitter Saturation Voltage 1.7V
Voltage - Collector Emitter Breakdown (Max) 1200V
Collector Emitter Breakdown Voltage 1.2kV
Max Collector Current 85A
Collector Emitter Voltage (VCEO) 2V
Polarity/Channel Type N-CHANNEL
Power - Max 313W
Input Type Standard
Element Configuration Single
Max Power Dissipation 313W
Subcategory Insulated Gate BIP Transistors
ECCN Code EAR99
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Published 2013
Packaging Tube
Operating Temperature -55°C~150°C TJ
Compliance
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free
Physical
Weight 6.500007g
Number of Pins 3
Package / Case TO-247-3
Mounting Type Through Hole
Mount Through Hole
Alternative Model
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