IRG7PH42U-EP
RoHS
/
Package TO-247-3
Category Discrete Semiconductor Products / Transistors - IGBTs - Single
Description
IGBT 1200V 90A 385W TO247AD
PDF
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Buying Options
Total Price: USD $3.3
Unit Price: USD $3.3
≥1 USD $3.3
Inventory: 1240
Minimum: 1
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Technical Details
Compliance
Lead Free Lead Free
RoHS Status RoHS Compliant
Radiation Hardening No
Dimensions
Width 5.3086mm
Length 15.87mm
Height 20.7mm
Technical
Fall Time-Max (tf) 86ns
Gate-Emitter Thr Voltage-Max 6V
Switching Energy 2.11mJ (on), 1.18mJ (off)
Td (on/off) @ 25°C 25ns/229ns
Gate Charge 157nC
IGBT Type Trench
Vce(on) (Max) @ Vge, Ic 2V @ 15V, 30A
Test Condition 600V, 30A, 10 Ω, 15V
Collector Emitter Saturation Voltage 2V
Voltage - Collector Emitter Breakdown (Max) 1200V
Collector Emitter Breakdown Voltage 1.2kV
Reverse Recovery Time 153 ns
Max Collector Current 90A
Collector Emitter Voltage (VCEO) 2V
Turn-Off Delay Time 229 ns
Polarity/Channel Type N-CHANNEL
Turn On Delay Time 25 ns
Input Type Standard
Power Dissipation 385W
Element Configuration Single
Rise Time-Max 41ns
Base Part Number IRG7PH42
Max Power Dissipation 385W
Subcategory Insulated Gate BIP Transistors
ECCN Code EAR99
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Published 2004
Packaging Tube
Operating Temperature -55°C~175°C TJ
Physical
Number of Pins 3
Package / Case TO-247-3
Mounting Type Through Hole
Mount Through Hole
Supply Chain
Factory Lead Time 14 Weeks
Alternative Model
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