IRG7PH37K10D-EPBF
RoHS
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Package TO-247-3
Category Discrete Semiconductor Products / Transistors - IGBTs - Single
Description
IGBT 1200V 45A 216W TO247AD
PDF
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Buying Options
Total Price: USD $3.88
Unit Price: USD $3.8808
≥1 USD $3.8808
Inventory: 4106
Minimum: 1
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Technical Details
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Technical
Operating Temperature -40°C~150°C TJ
Packaging Tube
Published 2013
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 216W
Rise Time-Max 45ns
Element Configuration Single
Input Type Standard
Power - Max 216W
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 2.4V
Max Collector Current 45A
Reverse Recovery Time 120 ns
Collector Emitter Breakdown Voltage 1.2kV
Voltage - Collector Emitter Breakdown (Max) 1200V
Test Condition 600V, 15A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.4V @ 15V, 15A
Gate Charge 135nC
Current - Collector Pulsed (Icm) 60A
Td (on/off) @ 25°C 50ns/240ns
Switching Energy 1mJ (on), 600μJ (off)
Gate-Emitter Thr Voltage-Max 7.5V
Fall Time-Max (tf) 100ns
Compliance
Radiation Hardening No
RoHS Status RoHS Compliant
Alternative Model
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