IRG7PH35UPBF
RoHS
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Package TO-247-3
Category Discrete Semiconductor Products / Transistors - IGBTs - Single
Description
IGBT 1200V 55A 210W TO247AC
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Buying Options
Total Price: USD $2.16
Unit Price: USD $2.156
≥1 USD $2.156
Inventory: 1111
Minimum: 1
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Technical Details
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Weight 38.000013g
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2010
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish MATTE TIN OVER NICKEL
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 210W
Peak Reflow Temperature (Cel) 250
Time@Peak Reflow Temperature-Max (s) 30
Number of Elements 1
Element Configuration Single
Case Connection COLLECTOR
Input Type Standard
Turn On Delay Time 30 ns
Power - Max 210W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Turn-Off Delay Time 160 ns
Collector Emitter Voltage (VCEO) 2.2V
Max Collector Current 55A
JEDEC-95 Code TO-247AC
Collector Emitter Breakdown Voltage 1.2kV
Voltage - Collector Emitter Breakdown (Max) 1200V
Collector Emitter Saturation Voltage 2.2V
Turn On Time 45 ns
Test Condition 600V, 20A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.2V @ 15V, 20A
Turn Off Time-Nom (toff) 400 ns
IGBT Type Trench
Gate Charge 85nC
Current - Collector Pulsed (Icm) 60A
Td (on/off) @ 25°C 30ns/160ns
Switching Energy 1.06mJ (on), 620μJ (off)
Gate-Emitter Thr Voltage-Max 6V
Fall Time-Max (tf) 105 ns
Dimensions
Height 20.7mm
Length 15.87mm
Width 5.31mm
Compliance
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status RoHS Compliant
Lead Free Lead Free
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