Gate-Emitter Thr Voltage-Max 6V
Switching Energy 1.06mJ (on), 620μJ (off)
Td (on/off) @ 25°C 30ns/160ns
Current - Collector Pulsed (Icm) 60A
Turn Off Time-Nom (toff) 400 ns
Vce(on) (Max) @ Vge, Ic 2.2V @ 15V, 20A
Test Condition 600V, 20A, 10 Ω, 15V
Collector Emitter Saturation Voltage 1.9V
Voltage - Collector Emitter Breakdown (Max) 1200V
Collector Emitter Breakdown Voltage 1.2kV
Reverse Recovery Time 105 ns
Max Collector Current 50A
Collector Emitter Voltage (VCEO) 2.2V
Turn-Off Delay Time 160 ns
Polarity/Channel Type N-CHANNEL
Transistor Application POWER CONTROL
Case Connection COLLECTOR
Element Configuration Single
Max Power Dissipation 180W
Subcategory Insulated Gate BIP Transistors
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature -55°C~150°C TJ