IRG7PH35UD1-EP
RoHS
/
Package TO-247-3
Category Discrete Semiconductor Products / Transistors - IGBTs - Single
Description
IGBT 1200V 50A 179W TO247
PDF
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Buying Options
Total Price: USD $1.11
Unit Price: USD $1.10675
≥1 USD $1.10675
≥10 USD $0.9082
≥100 USD $0.8797
≥500 USD $0.8512
≥1000 USD $0.8227
Inventory: 10201
Minimum: 1
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Technical Details
Compliance
RoHS Status RoHS Compliant
REACH SVHC No SVHC
Technical
Fall Time-Max (tf) 105ns
Gate-Emitter Thr Voltage-Max 6V
Switching Energy 620μJ (off)
Td (on/off) @ 25°C -/160ns
Current - Collector Pulsed (Icm) 150A
Gate Charge 130nC
IGBT Type Trench
Turn Off Time-Nom (toff) 400 ns
Vce(on) (Max) @ Vge, Ic 2.2V @ 15V, 20A
Test Condition 600V, 20A, 10 Ω, 15V
Collector Emitter Saturation Voltage 1.2kV
Voltage - Collector Emitter Breakdown (Max) 1200V
Collector Emitter Breakdown Voltage 1.2kV
JEDEC-95 Code TO-247AD
Max Collector Current 50A
Collector Emitter Voltage (VCEO) 2.2V
Polarity/Channel Type N-CHANNEL
Transistor Application POWER CONTROL
Power - Max 179W
Input Type Standard
Case Connection COLLECTOR
Element Configuration Single
Number of Elements 1
Qualification Status Not Qualified
Base Part Number IRG7PH35
Time@Peak Reflow Temperature-Max (s) 30
Peak Reflow Temperature (Cel) 250
Max Power Dissipation 179W
Subcategory Insulated Gate BIP Transistors
Terminal Finish MATTE TIN OVER NICKEL
ECCN Code EAR99
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
JESD-609 Code e3
Published 2012
Packaging Tube
Operating Temperature -55°C~150°C TJ
Physical
Transistor Element Material SILICON
Number of Pins 3
Package / Case TO-247-3
Mounting Type Through Hole
Mount Through Hole
Alternative Model
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