Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 2.2V
Max Collector Current 50A
Reverse Recovery Time 105 ns
Collector Emitter Breakdown Voltage 1.2kV
Voltage - Collector Emitter Breakdown (Max) 1200V
Collector Emitter Saturation Voltage 1.9V
Test Condition 600V, 20A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.2V @ 15V, 20A
Turn Off Time-Nom (toff) 400 ns
Current - Collector Pulsed (Icm) 60A
Td (on/off) @ 25°C 30ns/160ns
Switching Energy 1.06mJ (on), 620μJ (off)
Gate-Emitter Thr Voltage-Max 6V
Case Connection COLLECTOR
Element Configuration Single
Qualification Status Not Qualified
Base Part Number IRG7PH35
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Max Power Dissipation 180W
Subcategory Insulated Gate BIP Transistors
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature -55°C~150°C TJ