IRG7PH30K10PBF
RoHS
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Package TO-247-3
Category Discrete Semiconductor Products / Transistors - IGBTs - Single
Description
IGBT 1200V 33A 210W TO247AC
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Technical Details
Compliance
Lead Free Lead Free
RoHS Status RoHS Compliant
REACH SVHC No SVHC
Radiation Hardening No
Dimensions
Width 5.31mm
Length 15.87mm
Height 20.7mm
Technical
Fall Time-Max (tf) 56 ns
Gate-Emitter Thr Voltage-Max 7.5V
Switching Energy 530μJ (on), 380μJ (off)
Td (on/off) @ 25°C 14ns/110ns
Current - Collector Pulsed (Icm) 27A
Gate Charge 45nC
IGBT Type Trench
Turn Off Time-Nom (toff) 400 ns
Vce(on) (Max) @ Vge, Ic 2.35V @ 15V, 9A
Test Condition 600V, 9A, 22 Ω, 15V
Turn On Time 35 ns
Collector Emitter Saturation Voltage 2.05V
Voltage - Collector Emitter Breakdown (Max) 1200V
Collector Emitter Breakdown Voltage 1.2kV
JEDEC-95 Code TO-247AC
Max Collector Current 33A
Collector Emitter Voltage (VCEO) 2.35V
Polarity/Channel Type N-CHANNEL
Transistor Application POWER CONTROL
Input Type Standard
Case Connection COLLECTOR
Power Dissipation 210W
Element Configuration Single
Rise Time-Max 41 ns
Number of Elements 1
Time@Peak Reflow Temperature-Max (s) 30
Peak Reflow Temperature (Cel) 250
Max Power Dissipation 210W
Subcategory Insulated Gate BIP Transistors
Terminal Finish MATTE TIN OVER NICKEL
ECCN Code EAR99
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
JESD-609 Code e3
Published 2009
Packaging Tube
Operating Temperature -55°C~175°C TJ
Physical
Transistor Element Material SILICON
Number of Pins 3
Package / Case TO-247-3
Mounting Type Through Hole
Mount Through Hole
Alternative Model
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