Operating Temperature -55°C~150°C TJ
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Terminal Finish MATTE TIN OVER NICKEL
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 180W
Peak Reflow Temperature (Cel) 250
Time@Peak Reflow Temperature-Max (s) 30
Element Configuration Single
Case Connection COLLECTOR
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Turn-Off Delay Time 130 ns
Collector Emitter Voltage (VCEO) 2.35V
Max Collector Current 30A
Reverse Recovery Time 140ns
Collector Emitter Breakdown Voltage 1.2kV
Voltage - Collector Emitter Breakdown (Max) 1200V
Collector Emitter Saturation Voltage 2.35V
Test Condition 600V, 9A, 22 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.35V @ 15V, 9A
Turn Off Time-Nom (toff) 390 ns
Current - Collector Pulsed (Icm) 27A
Td (on/off) @ 25°C 14ns/110ns
Switching Energy 530μJ (on), 380μJ (off)
Gate-Emitter Thr Voltage-Max 7.5V