Gate-Emitter Thr Voltage-Max 6V
Switching Energy 543μJ (off)
Td (on/off) @ 25°C -/229ns
Current - Collector Pulsed (Icm) 100A
Vce(on) (Max) @ Vge, Ic 2.3V @ 15V, 15A
Test Condition 600V, 15A, 22 Ω, 15V
Voltage - Collector Emitter Breakdown (Max) 1200V
Collector Emitter Breakdown Voltage 1.2kV
Max Collector Current 30A
Collector Emitter Voltage (VCEO) 2.3V
Polarity/Channel Type N-CHANNEL
Element Configuration Single
Max Power Dissipation 115W
Subcategory Insulated Gate BIP Transistors
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature -55°C~150°C TJ