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IRG7PH28UD1MPBF

Infineon Technologies
RoHS
/
Package TO-247-3
Category Discrete Semiconductor Products / Transistors - IGBTs - Single
Description IGBT 1200V 30A 115W TO247AC
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Inventory: 8285
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Technical Details

Compliance

RoHS Status RoHS Compliant
Radiation Hardening No

Technical

Gate-Emitter Thr Voltage-Max 6V
Switching Energy 543μJ (off)
Td (on/off) @ 25°C -/229ns
Current - Collector Pulsed (Icm) 100A
Gate Charge 90nC
IGBT Type Trench
Vce(on) (Max) @ Vge, Ic 2.3V @ 15V, 15A
Test Condition 600V, 15A, 22 Ω, 15V
Voltage - Collector Emitter Breakdown (Max) 1200V
Collector Emitter Breakdown Voltage 1.2kV
Max Collector Current 30A
Collector Emitter Voltage (VCEO) 2.3V
Polarity/Channel Type N-CHANNEL
Power - Max 115W
Input Type Standard
Element Configuration Single
Max Power Dissipation 115W
Subcategory Insulated Gate BIP Transistors
ECCN Code EAR99
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Published 2013
Packaging Tube
Operating Temperature -55°C~150°C TJ

Physical

Number of Pins 3
Package / Case TO-247-3
Mounting Type Through Hole
Mount Through Hole

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