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IRG7CH44K10EF

Infineon Technologies
RoHS
RoHS RoHS compliant
Package Die
Category Discrete Semiconductor Products / Transistors - IGBTs - Single
Description IGBT CHIP WAFER
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Technical Details

Supply Chain

Factory Lead Time 16 Weeks

Physical

Mounting Type Surface Mount
Package / Case Die
Surface Mount YES
Transistor Element Material SILICON

Technical

Operating Temperature -40°C~175°C TJ
Packaging Bulk
Published 2012
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Position UPPER
Terminal Form NO LEAD
JESD-30 Code S-XUUC-N2
Number of Elements 1
Configuration SINGLE
Input Type Standard
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Voltage - Collector Emitter Breakdown (Max) 1200V
Current - Collector (Ic) (Max) 25A
Turn On Time 100 ns
Test Condition 600V, 25A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.3V @ 15V, 25A
Turn Off Time-Nom (toff) 475 ns
Gate Charge 160nC
Td (on/off) @ 25°C 60ns/230ns
Gate-Emitter Voltage-Max 30V
VCEsat-Max 1.63 V
Gate-Emitter Thr Voltage-Max 7.5V

Compliance

RoHS Status ROHS3 Compliant

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