IRG7CH30K10EF
RoHS 
RoHS compliant
RoHS compliantPackage Die
Category Discrete Semiconductor Products / Transistors - IGBTs - Single
Description
IGBT CHIP WAFER
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Technical Details
Compliance
RoHS Status ROHS3 Compliant
Technical
Gate-Emitter Thr Voltage-Max 7.5V
VCEsat-Max 2.2 V
Gate-Emitter Voltage-Max 30V
Td (on/off) @ 25°C 10ns/90ns
Gate Charge 4.8nC
IGBT Type Trench
Turn Off Time-Nom (toff) 311 ns
Vce(on) (Max) @ Vge, Ic 2.56V @ 15V, 10A
Test Condition 600V, 10A, 22 Ω, 15V
Turn On Time 38.5 ns
Current - Collector (Ic) (Max) 10A
Voltage - Collector Emitter Breakdown (Max) 1200V
Polarity/Channel Type N-CHANNEL
Transistor Application POWER CONTROL
Input Type Standard
Configuration SINGLE
Number of Elements 1
JESD-30 Code R-XUUC-N2
Terminal Form NO LEAD
Terminal Position UPPER
ECCN Code EAR99
Number of Terminations 2
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Active
Published 2013
Packaging Bulk
Operating Temperature -40°C~175°C TJ
Physical
Transistor Element Material SILICON
Surface Mount YES
Package / Case Die
Mounting Type Surface Mount
Supply Chain
Factory Lead Time 16 Weeks
Alternative Model
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