Gate-Emitter Thr Voltage-Max 6V
Gate-Emitter Voltage-Max 20V
Switching Energy 190μJ (on), 920μJ (off)
Td (on/off) @ 25°C 26ns/194ns
Current - Collector Pulsed (Icm) 44A
Turn Off Time-Nom (toff) 706 ns
Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 12A
Test Condition 480V, 12A, 50 Ω, 15V
Power Dissipation-Max (Abs) 66W
Current - Collector (Ic) (Max) 22A
Voltage - Collector Emitter Breakdown (Max) 600V
Polarity/Channel Type N-CHANNEL
Transistor Application POWER CONTROL
Qualification Status Not Qualified
Base Part Number IRG4RC20FPBF
Time@Peak Reflow Temperature-Max (s) 30
Reach Compliance Code compliant
Peak Reflow Temperature (Cel) 260
Subcategory Insulated Gate BIP Transistors
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature -55°C~150°C TJ