Operating Temperature -55°C~150°C TJ
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Additional Feature LOW CONDUCTION LOSS
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 38W
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
Base Part Number IRG4RC10UDPBF
Element Configuration Single
Case Connection COLLECTOR
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Turn-Off Delay Time 87 ns
Collector Emitter Voltage (VCEO) 2.6V
Max Collector Current 8.5A
Reverse Recovery Time 28 ns
Collector Emitter Breakdown Voltage 600V
Collector Emitter Saturation Voltage 2.6V
Max Breakdown Voltage 600V
Test Condition 480V, 5A, 100 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.6V @ 15V, 5A
Turn Off Time-Nom (toff) 345 ns
Current - Collector Pulsed (Icm) 34A
Td (on/off) @ 25°C 40ns/87ns
Switching Energy 140μJ (on), 120μJ (off)
Gate-Emitter Voltage-Max 20V
Fall Time-Max (tf) 210 ns