IRG4RC10SDPBF
RoHS
/
Package TO-252-3, DPak (2 Leads + Tab), SC-63
Category Discrete Semiconductor Products / Transistors - IGBTs - Single
Description
IGBT 600V 14A 38W DPAK
PDF
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Buying Options
Total Price: USD $1.34
Unit Price: USD $1.34235
≥1 USD $1.34235
≥10 USD $1.102
≥100 USD $1.0678
≥500 USD $1.03265
≥1000 USD $0.99845
Inventory: 1319
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 8 Weeks
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 3
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2004
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
Termination SMD/SMT
ECCN Code EAR99
Terminal Finish MATTE TIN OVER NICKEL
Additional Feature LOW CONDUCTION LOSS
Subcategory Insulated Gate BIP Transistors
Voltage - Rated DC 600V
Max Power Dissipation 38W
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating 14A
Time@Peak Reflow Temperature-Max (s) 30
Base Part Number IRG4RC10SDPBF
JESD-30 Code R-PSSO-G2
Number of Elements 1
Element Configuration Single
Power Dissipation 38W
Case Connection COLLECTOR
Input Type Standard
Transistor Application POWER CONTROL
Rise Time 31 ns
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 1.8V
Max Collector Current 14A
Reverse Recovery Time 28 ns
JEDEC-95 Code TO-252AA
Collector Emitter Breakdown Voltage 600V
Collector Emitter Saturation Voltage 1.7V
Turn On Time 106 ns
Test Condition 480V, 8A, 100 Ω, 15V
Vce(on) (Max) @ Vge, Ic 1.8V @ 15V, 8A
Turn Off Time-Nom (toff) 1780 ns
Gate Charge 15nC
Current - Collector Pulsed (Icm) 18A
Td (on/off) @ 25°C 76ns/815ns
Switching Energy 310μJ (on), 3.28mJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 6V
Fall Time-Max (tf) 1080 ns
Dimensions
Height 1.2446mm
Length 6.7056mm
Width 6.22mm
Compliance
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status RoHS Compliant
Lead Free Lead Free
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