Fall Time-Max (tf) 210 ns
Gate-Emitter Thr Voltage-Max 6.5V
Gate-Emitter Voltage-Max 20V
Switching Energy 250μJ (on), 140μJ (off)
Td (on/off) @ 25°C 49ns/97ns
Current - Collector Pulsed (Icm) 18A
Turn Off Time-Nom (toff) 410 ns
Vce(on) (Max) @ Vge, Ic 2.62V @ 15V, 5A
Test Condition 480V, 5A, 100 Ω, 15V
Max Breakdown Voltage 600V
Collector Emitter Saturation Voltage 2.39V
Collector Emitter Breakdown Voltage 600V
Reverse Recovery Time 28 ns
Collector Emitter Voltage (VCEO) 2.62V
Polarity/Channel Type N-CHANNEL
Transistor Application MOTOR CONTROL
Case Connection COLLECTOR
Element Configuration Single
Base Part Number IRG4RC10KDPBF
Time@Peak Reflow Temperature-Max (s) 30
Peak Reflow Temperature (Cel) 260
Max Power Dissipation 38W
Subcategory Insulated Gate BIP Transistors
Additional Feature ULTRA FAST SOFT RECOVERY
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Last Time Buy
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ