IRG4RC10KD
RoHS
/
Package TO-252-3, DPak (2 Leads + Tab), SC-63
Category Discrete Semiconductor Products / Transistors - IGBTs - Single
Description
IGBT 600V 9A 38W DPAK
PDF
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Buying Options
Total Price: USD $0.83
Unit Price: USD $0.8303
≥1 USD $0.8303
≥10 USD $0.68115
≥100 USD $0.66025
≥500 USD $0.6384
≥1000 USD $0.6175
Inventory: 1278
Minimum: 1
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Technical Details
Physical
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Surface Mount YES
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2001
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Additional Feature ULTRA FAST SOFT RECOVERY
Subcategory Insulated Gate BIP Transistors
Terminal Position SINGLE
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
JESD-30 Code R-PSSO-G2
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Case Connection COLLECTOR
Input Type Standard
Power - Max 38W
Transistor Application MOTOR CONTROL
Polarity/Channel Type N-CHANNEL
Reverse Recovery Time 28ns
JEDEC-95 Code TO-252AA
Voltage - Collector Emitter Breakdown (Max) 600V
Current - Collector (Ic) (Max) 9A
Power Dissipation-Max (Abs) 38W
Turn On Time 78 ns
Test Condition 480V, 5A, 100 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.62V @ 15V, 5A
Turn Off Time-Nom (toff) 410 ns
Gate Charge 19nC
Current - Collector Pulsed (Icm) 18A
Td (on/off) @ 25°C 49ns/97ns
Switching Energy 250μJ (on), 140μJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 6.5V
Fall Time-Max (tf) 210ns
Compliance
RoHS Status Non-RoHS Compliant
Alternative Model
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