Gate-Emitter Thr Voltage-Max 6V
Gate-Emitter Voltage-Max 20V
Switching Energy 8.8mJ (on), 9.4mJ (off)
Td (on/off) @ 25°C 46ns/250ns
Current - Collector Pulsed (Icm) 200A
Turn Off Time-Nom (toff) 810 ns
Vce(on) (Max) @ Vge, Ic 2.7V @ 15V, 70A
Test Condition 960V, 70A, 5 Ω, 15V
Collector Emitter Saturation Voltage 2.52V
Voltage - Collector Emitter Breakdown (Max) 1200V
Collector Emitter Breakdown Voltage 1.2kV
Reverse Recovery Time 110 ns
Max Collector Current 99A
Collector Emitter Voltage (VCEO) 2.7V
Turn-Off Delay Time 350 ns
Polarity/Channel Type N-CHANNEL
Transistor Application POWER CONTROL
Case Connection COLLECTOR
Element Configuration Single
Max Power Dissipation 350W
Subcategory Insulated Gate BIP Transistors
Additional Feature ULTRA FAST SWITCHING
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Last Time Buy
Operating Temperature -55°C~150°C TJ