IRG4PSC71UPBF
RoHS
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Package TO-274AA
Category Discrete Semiconductor Products / Transistors - IGBTs - Single
Description
IGBT 600V 85A 350W SUPER247
PDF
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Buying Options
Total Price: USD $2.21
Unit Price: USD $2.21255
≥1 USD $2.21255
≥10 USD $1.81545
≥100 USD $1.75845
≥500 USD $1.70145
≥1000 USD $1.6454
Inventory: 7302
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 22 Weeks
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-274AA
Number of Pins 3
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Bulk
Published 1999
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Termination Through Hole
ECCN Code EAR99
Additional Feature LOW CONDUCTION LOSS
Subcategory Insulated Gate BIP Transistors
Voltage - Rated DC 600V
Max Power Dissipation 350W
Current Rating 85A
Number of Elements 1
Element Configuration Single
Power Dissipation 350W
Case Connection COLLECTOR
Input Type Standard
Turn On Delay Time 34 ns
Transistor Application POWER CONTROL
Rise Time 50 ns
Polarity/Channel Type N-CHANNEL
Turn-Off Delay Time 56 ns
Collector Emitter Voltage (VCEO) 2V
Max Collector Current 85A
Collector Emitter Breakdown Voltage 600V
Collector Emitter Saturation Voltage 2V
Turn On Time 79 ns
Test Condition 480V, 60A, 5 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2V @ 15V, 60A
Turn Off Time-Nom (toff) 304 ns
Gate Charge 340nC
Current - Collector Pulsed (Icm) 200A
Td (on/off) @ 25°C 34ns/56ns
Switching Energy 420μJ (on), 1.99mJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 6V
Dimensions
Height 20.8mm
Length 16.0782mm
Width 5.3mm
Compliance
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status RoHS Compliant
Lead Free Contains Lead, Lead Free
Alternative Model
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