IRG4PH50S-EPBF
RoHS
/
Package TO-247-3
Category Discrete Semiconductor Products / Transistors - IGBTs - Single
Description
IGBT 1200V 57A 200W TO247AD
PDF
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Buying Options
Total Price: USD $3.43
Unit Price: USD $3.43425
≥1 USD $3.43425
≥200 USD $2.8177
≥500 USD $2.7303
≥1000 USD $2.64195
Inventory: 1124
Minimum: 1
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Technical Details
Compliance
Lead Free Lead Free
RoHS Status RoHS Compliant
REACH SVHC No SVHC
Radiation Hardening No
Dimensions
Width 5.3086mm
Length 15.87mm
Height 20.7mm
Technical
Switching Energy 1.8mJ (on), 19.6mJ (off)
Td (on/off) @ 25°C 32ns/845ns
Current - Collector Pulsed (Icm) 114A
Gate Charge 167nC
Turn Off Time-Nom (toff) 2170 ns
Vce(on) (Max) @ Vge, Ic 1.7V @ 15V, 33A
Test Condition 960V, 33A, 5 Ω, 15V
Turn On Time 62 ns
Collector Emitter Saturation Voltage 1.7V
Voltage - Collector Emitter Breakdown (Max) 1200V
Collector Emitter Breakdown Voltage 1.2kV
JEDEC-95 Code TO-247AD
Max Collector Current 57A
Collector Emitter Voltage (VCEO) 1.7V
Polarity/Channel Type N-CHANNEL
Transistor Application POWER CONTROL
Input Type Standard
Case Connection COLLECTOR
Power Dissipation 200W
Element Configuration Dual
Number of Elements 1
Terminal Position SINGLE
Max Power Dissipation 200W
ECCN Code EAR99
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Published 2000
Packaging Tube
Operating Temperature -55°C~150°C TJ
Physical
Transistor Element Material SILICON
Number of Pins 3
Package / Case TO-247-3
Mounting Type Through Hole
Mount Through Hole
Supply Chain
Factory Lead Time 14 Weeks
Alternative Model
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