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IRG4PH50KDPBF

Infineon Technologies
RoHS
RoHS RoHS compliant
Package TO-247-3
Category Discrete Semiconductor Products / Transistors - IGBTs - Single
Description IRG4PH50KDPBF Series 1200 V 24 A N-Channel UltraFast IGBT - TO-247AC
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Buying Options
Total Price: USD $9.78
Unit Price: USD $9.775853
≥1 USD $9.775853
≥10 USD $8.637569
≥25 USD $7.943045
≥100 USD $7.36143
Inventory: 8924
Minimum: 1
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Technical Details

Supply Chain

Factory Lead Time 14 Weeks

Physical

Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2000
Part Status Last Time Buy
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Termination Through Hole
ECCN Code EAR99
Additional Feature LOW CONDUCTION LOSS
Subcategory Insulated Gate BIP Transistors
Voltage - Rated DC 1.2kV
Max Power Dissipation 200W
Current Rating 45A
Number of Elements 1
Element Configuration Single
Power Dissipation 200W
Case Connection COLLECTOR
Input Type Standard
Turn On Delay Time 87 ns
Transistor Application MOTOR CONTROL
Rise Time 100 ns
Polarity/Channel Type N-CHANNEL
Turn-Off Delay Time 140 ns
Collector Emitter Voltage (VCEO) 3.5V
Max Collector Current 45A
Reverse Recovery Time 90 ns
JEDEC-95 Code TO-247AC
Collector Emitter Breakdown Voltage 1.2kV
Voltage - Collector Emitter Breakdown (Max) 1200V
Collector Emitter Saturation Voltage 2.77V
Turn On Time 139 ns
Test Condition 800V, 24A, 5 Ω, 15V
Vce(on) (Max) @ Vge, Ic 3.5V @ 15V, 24A
Turn Off Time-Nom (toff) 700 ns
Gate Charge 180nC
Current - Collector Pulsed (Icm) 90A
Td (on/off) @ 25°C 87ns/140ns
Switching Energy 3.83mJ (on), 1.9mJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 6V

Dimensions

Height 20.3mm
Length 15.875mm
Width 5.3mm

Compliance

Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free

Alternative Model

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