Fall Time-Max (tf) 190 ns
Gate-Emitter Thr Voltage-Max 3V
Gate-Emitter Voltage-Max 20V
Switching Energy 1.04mJ (on), 3.4mJ (off)
Td (on/off) @ 25°C 24ns/220ns
Current - Collector Pulsed (Icm) 82A
Turn Off Time-Nom (toff) 690 ns
Vce(on) (Max) @ Vge, Ic 3.1V @ 15V, 21A
Test Condition 960V, 21A, 10 Ω, 15V
Collector Emitter Saturation Voltage 2.43V
Voltage - Collector Emitter Breakdown (Max) 1200V
Collector Emitter Breakdown Voltage 1.2kV
Max Collector Current 41A
Collector Emitter Voltage (VCEO) 3.1V
Turn-Off Delay Time 220 ns
Polarity/Channel Type N-CHANNEL
Transistor Application POWER CONTROL
Case Connection COLLECTOR
Element Configuration Single
Max Power Dissipation 160W
Subcategory Insulated Gate BIP Transistors
Additional Feature LOW CONDUCTION LOSS
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Last Time Buy
Operating Temperature -55°C~150°C TJ