Operating Temperature -55°C~150°C TJ
Part Status Last Time Buy
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 160W
Element Configuration Single
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 3.1V
Max Collector Current 41A
Reverse Recovery Time 50 ns
Collector Emitter Breakdown Voltage 1.2kV
Voltage - Collector Emitter Breakdown (Max) 1200V
Collector Emitter Saturation Voltage 2.43V
Test Condition 800V, 21A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic 3.1V @ 15V, 21A
Turn Off Time-Nom (toff) 600 ns
Current - Collector Pulsed (Icm) 82A
Td (on/off) @ 25°C 22ns/100ns
Switching Energy 1.95mJ (on), 1.71mJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 6V