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IRG4PH40KDPBF

Infineon Technologies
RoHS
RoHS RoHS compliant
Package TO-247-3
Category Discrete Semiconductor Products / Transistors - IGBTs - Single
Description IGBT 1200V 30A 160W TO247AC
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Buying Options
Total Price: USD $4.77
Unit Price: USD $4.768453
≥1 USD $4.768453
≥10 USD $4.238041
≥30 USD $3.915068
≥100 USD $3.64461
Inventory: 1175
Minimum: 1
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Technical Details

Supply Chain

Factory Lead Time 14 Weeks

Physical

Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2000
JESD-609 Code e3
Part Status Last Time Buy
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Additional Feature LOW CONDUCTION LOSS
Subcategory Insulated Gate BIP Transistors
Voltage - Rated DC 1.2kV
Max Power Dissipation 160W
Peak Reflow Temperature (Cel) 250
Current Rating 30A
Time@Peak Reflow Temperature-Max (s) 30
Number of Elements 1
Element Configuration Single
Power Dissipation 160W
Case Connection COLLECTOR
Input Type Standard
Turn On Delay Time 50 ns
Transistor Application MOTOR CONTROL
Rise Time 31 ns
Polarity/Channel Type N-CHANNEL
Turn-Off Delay Time 96 ns
Collector Emitter Voltage (VCEO) 3.4V
Max Collector Current 30A
Reverse Recovery Time 63 ns
JEDEC-95 Code TO-247AC
Collector Emitter Breakdown Voltage 1.2kV
Voltage - Collector Emitter Breakdown (Max) 1200V
Collector Emitter Saturation Voltage 3.4V
Turn On Time 82 ns
Test Condition 800V, 15A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic 3.4V @ 15V, 15A
Turn Off Time-Nom (toff) 730 ns
Gate Charge 94nC
Current - Collector Pulsed (Icm) 60A
Td (on/off) @ 25°C 50ns/96ns
Switching Energy 1.31mJ (on), 1.12mJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 3V

Dimensions

Height 20.3mm
Length 15.875mm
Width 5.3mm

Compliance

Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free

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