Fall Time-Max (tf) 170 ns
Gate-Emitter Thr Voltage-Max 6V
Gate-Emitter Voltage-Max 20V
Switching Energy 640μJ (on), 920μJ (off)
Td (on/off) @ 25°C 28ns/200ns
Current - Collector Pulsed (Icm) 40A
Turn Off Time-Nom (toff) 640 ns
Vce(on) (Max) @ Vge, Ic 4.2V @ 15V, 10A
Test Condition 960V, 10A, 23 Ω, 15V
Collector Emitter Saturation Voltage 3.1V
Voltage - Collector Emitter Breakdown (Max) 1200V
Collector Emitter Breakdown Voltage 1.2kV
Max Collector Current 20A
Collector Emitter Voltage (VCEO) 4.2V
Polarity/Channel Type N-CHANNEL
Transistor Application MOTOR CONTROL
Case Connection COLLECTOR
Element Configuration Single
Max Power Dissipation 100W
Subcategory Insulated Gate BIP Transistors
Additional Feature LOW CONDUCTION LOSS
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Last Time Buy
Operating Temperature -55°C~150°C TJ