Gate-Emitter Thr Voltage-Max 6.5V
Gate-Emitter Voltage-Max 20V
Switching Energy 620μJ (on), 300μJ (off)
Td (on/off) @ 25°C 50ns/100ns
Current - Collector Pulsed (Icm) 22A
Turn Off Time-Nom (toff) 730 ns
Vce(on) (Max) @ Vge, Ic 4.3V @ 15V, 5A
Test Condition 800V, 5A, 50 Ω, 15V
Collector Emitter Saturation Voltage 3.17V
Voltage - Collector Emitter Breakdown (Max) 1200V
Collector Emitter Breakdown Voltage 1.2kV
Reverse Recovery Time 51 ns
Max Collector Current 11A
Collector Emitter Voltage (VCEO) 4.3V
Polarity/Channel Type N-CHANNEL
Transistor Application MOTOR CONTROL
Case Connection COLLECTOR
Element Configuration Single
Max Power Dissipation 60W
Subcategory Insulated Gate BIP Transistors
Additional Feature LOW CONDUCTION LOSS
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Last Time Buy
Operating Temperature -55°C~150°C TJ