Gate-Emitter Thr Voltage-Max 6V
Gate-Emitter Voltage-Max 20V
Switching Energy 300μJ (on), 4.6mJ (off)
Td (on/off) @ 25°C 42ns/310ns
Current - Collector Pulsed (Icm) 360A
Turn Off Time-Nom (toff) 770 ns
Vce(on) (Max) @ Vge, Ic 1.8V @ 15V, 60A
Test Condition 480V, 60A, 5 Ω, 15V
Collector Emitter Saturation Voltage 1.8V
Collector Emitter Breakdown Voltage 600V
Max Collector Current 90A
Collector Emitter Voltage (VCEO) 1.8V
Turn-Off Delay Time 310 ns
Polarity/Channel Type N-CHANNEL
Transistor Application POWER CONTROL
Case Connection COLLECTOR
Element Configuration Single
Max Power Dissipation 520W
Subcategory Insulated Gate BIP Transistors
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Last Time Buy
Operating Temperature -55°C~150°C TJ