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IRG4PC50WPBF

Infineon Technologies
RoHS
RoHS RoHS compliant
Package TO-247-3
Category Discrete Semiconductor Products / Transistors - IGBTs - Single
Description IGBT 600V 55A 200W TO247AC
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Technical Details

Compliance

Lead Free Lead Free
RoHS Status ROHS3 Compliant
REACH SVHC No SVHC
Radiation Hardening No

Dimensions

Width 5.3mm
Length 15.875mm
Height 20.2946mm

Technical

Fall Time-Max (tf) 86 ns
Gate-Emitter Thr Voltage-Max 6V
Gate-Emitter Voltage-Max 20V
Switching Energy 80μJ (on), 320μJ (off)
Td (on/off) @ 25°C 46ns/120ns
Current - Collector Pulsed (Icm) 220A
Gate Charge 180nC
Turn Off Time-Nom (toff) 272 ns
Vce(on) (Max) @ Vge, Ic 2.3V @ 15V, 27A
Test Condition 480V, 27A, 5 Ω, 15V
Turn On Time 74 ns
Collector Emitter Saturation Voltage 2.3V
Collector Emitter Breakdown Voltage 600V
JEDEC-95 Code TO-247AC
Max Collector Current 55A
Collector Emitter Voltage (VCEO) 2.3V
Turn-Off Delay Time 120 ns
Polarity/Channel Type N-CHANNEL
Rise Time 33 ns
Transistor Application POWER CONTROL
Turn On Delay Time 46 ns
Input Type Standard
Case Connection COLLECTOR
Power Dissipation 200W
Element Configuration Dual
Number of Elements 1
Current Rating 55A
Terminal Position SINGLE
Max Power Dissipation 200W
Voltage - Rated DC 600V
Subcategory Insulated Gate BIP Transistors
Additional Feature LOW CONDUCTION LOSS
ECCN Code EAR99
Termination Through Hole
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Last Time Buy
Published 2000
Packaging Bulk
Operating Temperature -55°C~150°C TJ

Physical

Transistor Element Material SILICON
Weight 38.000013g
Number of Pins 3
Package / Case TO-247-3
Mounting Type Through Hole
Mount Through Hole

Supply Chain

Factory Lead Time 14 Weeks

Alternative Model

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