Gate-Emitter Thr Voltage-Max 6V
Gate-Emitter Voltage-Max 20V
Switching Energy 1.61mJ (on), 840μJ (off)
Td (on/off) @ 25°C 63ns/150ns
Current - Collector Pulsed (Icm) 104A
Turn Off Time-Nom (toff) 480 ns
Vce(on) (Max) @ Vge, Ic 2.2V @ 15V, 30A
Test Condition 480V, 30A, 5 Ω, 15V
Collector Emitter Saturation Voltage 1.84V
Collector Emitter Breakdown Voltage 600V
Reverse Recovery Time 50 ns
Max Collector Current 52A
Collector Emitter Voltage (VCEO) 2.2V
Turn-Off Delay Time 150 ns
Polarity/Channel Type N-CHANNEL
Transistor Application POWER CONTROL
Case Connection COLLECTOR
Element Configuration Single
Max Power Dissipation 200W
Subcategory Insulated Gate BIP Transistors
Additional Feature ULTRA FAST SOFT RECOVERY
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Last Time Buy
Operating Temperature -55°C~150°C TJ