IRG4PC50F-EPBF
RoHS
/
Package TO-247-3
Category Discrete Semiconductor Products / Transistors - IGBTs - Single
Description
IGBT 600V 70A 200W TO247AD
PDF
/
Buying Options
Total Price: USD $2.29
Unit Price: USD $2.293636
≥1 USD $2.293636
≥200 USD $0.915091
≥500 USD $0.884895
≥1000 USD $0.870453
Inventory: 5490
Minimum: 1
-
+
Technical Details
Compliance
RoHS Status RoHS Compliant
Radiation Hardening No
Dimensions
Width 5.3086mm
Length 15.875mm
Height 20.701mm
Technical
Fall Time-Max (tf) 190ns
Gate-Emitter Thr Voltage-Max 6V
Switching Energy 370μJ (on), 2.1mJ (off)
Td (on/off) @ 25°C 31ns/240ns
Current - Collector Pulsed (Icm) 280A
Gate Charge 190nC
Turn Off Time-Nom (toff) 620 ns
Vce(on) (Max) @ Vge, Ic 1.6V @ 15V, 39A
Test Condition 480V, 39A, 5 Ω, 15V
Turn On Time 52 ns
Collector Emitter Saturation Voltage 1.45V
Gate to Source Voltage (Vgs) 20V
Collector Emitter Breakdown Voltage 600V
JEDEC-95 Code TO-247AD
Max Collector Current 70A
Collector Emitter Voltage (VCEO) 1.6V
Turn-Off Delay Time 240 ns
Polarity/Channel Type N-CHANNEL
Transistor Application POWER CONTROL
Turn On Delay Time 31 ns
Input Type Standard
Case Connection COLLECTOR
Power Dissipation 200W
Element Configuration Single
Number of Elements 1
Max Power Dissipation 200W
Subcategory Insulated Gate BIP Transistors
ECCN Code EAR99
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Published 2008
Packaging Tube
Operating Temperature -55°C~150°C TJ
Physical
Transistor Element Material SILICON
Number of Pins 3
Package / Case TO-247-3
Mounting Type Through Hole
Mount Through Hole
Supply Chain
Factory Lead Time 11 Weeks
Alternative Model
Recommended For You
IRG4PC50F-EPBF+price,IRG4PC50F-EPBF+datasheet,IRG4PC50F-EPBF+in stock,buy+IRG4PC50F-EPBF,finder+IRG4PC50F-EPBF,IRG4PC50F-EPBF+tutorials,IRG4PC50F-EPBF+download