Fall Time-Max (tf) 120 ns
Gate-Emitter Thr Voltage-Max 6V
Gate-Emitter Voltage-Max 20V
Switching Energy 710μJ (on), 350μJ (off)
Td (on/off) @ 25°C 54ns/110ns
Current - Collector Pulsed (Icm) 160A
Turn Off Time-Nom (toff) 330 ns
Continuous Collector Current 40A
Max Junction Temperature (Tj) 150°C
Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 20A
Test Condition 480V, 20A, 10 Ω, 15V
Collector Emitter Saturation Voltage 2.15V
Collector Emitter Breakdown Voltage 600V
Reverse Recovery Time 42 ns
Max Collector Current 40A
Collector Emitter Voltage (VCEO) 600V
Turn-Off Delay Time 110 ns
Polarity/Channel Type N-CHANNEL
Transistor Application POWER CONTROL
Case Connection COLLECTOR
Element Configuration Single
Max Power Dissipation 160W
Subcategory Insulated Gate BIP Transistors
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Last Time Buy
Operating Temperature -55°C~150°C TJ