Gate-Emitter Thr Voltage-Max 6V
Gate-Emitter Voltage-Max 20V
Switching Energy 950μJ (on), 2.01mJ (off)
Td (on/off) @ 25°C 63ns/230ns
Current - Collector Pulsed (Icm) 196A
Turn Off Time-Nom (toff) 660 ns
Vce(on) (Max) @ Vge, Ic 1.7V @ 15V, 27A
Test Condition 480V, 27A, 10 Ω, 15V
Collector Emitter Saturation Voltage 1.7V
Collector Emitter Breakdown Voltage 600V
Reverse Recovery Time 42 ns
Max Collector Current 49A
Collector Emitter Voltage (VCEO) 1.7V
Turn-Off Delay Time 230 ns
Polarity/Channel Type N-CHANNEL
Transistor Application POWER CONTROL
Case Connection COLLECTOR
Element Configuration Single
Max Power Dissipation 160W
Subcategory Insulated Gate BIP Transistors
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Last Time Buy
Operating Temperature -55°C~150°C TJ