Fall Time-Max (tf) 100 ns
Gate-Emitter Thr Voltage-Max 6V
Gate-Emitter Voltage-Max 20V
Switching Energy 130μJ (on), 130μJ (off)
Td (on/off) @ 25°C 25ns/99ns
Current - Collector Pulsed (Icm) 92A
Turn Off Time-Nom (toff) 300 ns
Vce(on) (Max) @ Vge, Ic 2.7V @ 15V, 12A
Test Condition 480V, 12A, 23 Ω, 15V
Collector Emitter Saturation Voltage 2.7V
Collector Emitter Breakdown Voltage 600V
Max Collector Current 23A
Collector Emitter Voltage (VCEO) 2.7V
Polarity/Channel Type N-CHANNEL
Transistor Application POWER CONTROL
Case Connection COLLECTOR
Element Configuration Dual
Max Power Dissipation 100W
Subcategory Insulated Gate BIP Transistors
Additional Feature LOW CONDUCTION LOSS
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature -55°C~150°C TJ